Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping

On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs

The introduction of SiGe channel pMOSFETs for high mobility devices is expected to enhance the impact ionization phenomenon, making it necessary to study Hot Carrier (HC) degradation also for the p-channel MOSFET reliability. The study of pure HC effects on pMOSFETs is complicated due to the mixing with Negative Bias Temperature Instability (NBTI). In the first part of this work the interaction...

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-th...

New insights on the PBTI phenomena in SiON pMOSFETs

0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.015 ⇑ Corresponding author. Tel.: +49 89 234 22237; fa E-mail address: [email protected] (K. Rott) The physical origin of both Negativeand Positive Bias Temperature Instability (N-/PBTI) is still unclear and under debate. We analyzed the rarely studied recovery behavior after PBTI stress in pMO...

Superior reliability of high mobility (Si)Ge channel pMOSFETs

0167-9317/$ see front matter 2013 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2013.03.001 ⇑ Corresponding author. E-mail address: [email protected] (J. Franco) With a significantly reduced Negative Bias Temperature Instability (NBTI), SiGe channel pMOSFETs promise to virtually eliminate this reliability issue for ultra-thin EOT devices. The intrinsically superior NBTI robustness of the ...